Method of manufacturing color filter substrate wherein a transparent substrate is etched to form a plurality of trenches to receive color filter material

ABSTRACT

A method of manufacturing a color filter substrate includes forming a plurality of trenches having a predetermined depth by etching a surface of a transparent substrate, disposing a color filter material in the plurality of trenches to form a color filter layer, and forming a transparent electrode on the transparent substrate including the color filter layer therein.

CROSS-REFERENCE TO RELATED APPLICATION

This application claims priority to Korean Patent Application No.2008-09210 filed on Jan. 29, 2008, the contents of which areincorporated herein by reference in their entirety.

BACKGROUND

1. Technical Field

The present disclosure relates to a method of manufacturing a colorfilter substrate and a thin film transistor substrate, and moreparticularly, to a method of manufacturing a color filter substrate anda thin film transistor substrate used in a display apparatus.

2. Discussion of the Related Art

In fabricating a color filter substrate used for a thin film transistorliquid crystal display (TFT-LCD), a color filter layer including a redpixel, a green pixel and a blue pixel is formed. The color filter layercan be formed by a pigment dispersion technology. In the pigmentdispersion technology, a photoresist containing a pigment is coated,exposed and developed. A post-bake is performed with respect to thephotoresist to form a color filter having a certain color. Then theprocesses of coating, exposing, developing and post-bake of thephotoresist are repeated such that color filters having various colorsare sequentially formed.

However, the pigment dispersion technology is complex because thecoating process, the exposing process, the developing process and thepost-bake process are respectively performed with respect to the red,green and blue photoresist. In the pigment dispersion technology, thephotoresist may be wasted because each photoresist is coated through aspin coating process, and then the photoresist is removed in thedeveloping process.

A color filter layer can be formed by an inkjet printing technology. Inthe inkjet printing technology, a thick black matrix is formed by usingan organic material, and color ink including a pigment and a solvent issprayed through a nozzle by using the thick black matrix as a barrier.Then the solvent is removed.

The inkjet printing technology uses a smaller amount of materials ascompared with the pigment dispersion technology.

However, with the inkjet printing technology, the barrier is used toprevent the overflow phenomenon of the color ink. To enhance the colorreproducibility and to reduce the coupling phenomenon between pixels,the barrier having a high height is required. Thus, an organic blackmatrix that has a thickness of about 3 μm is used. However, when theorganic black matrix has the thickness of about 3 μm, the exposureprocess and the pre-bake process are performed for an extended period oftime due to the increased thickness of the organic black matrix. Theextended period time of the exposure process and the pre-bake process tothe black matrix can cause remnants, wrinkles and instability of apattern to the black matrix.

SUMMARY OF THE INVENTION

According to an exemplary embodiment of the present invention, a methodof manufacturing a color filter substrate comprises forming a pluralityof trenches having a predetermined depth by etching a surface of atransparent substrate, disposing a color filter material in theplurality of trenches to form a color filter layer, and forming atransparent electrode on the transparent substrate including the colorfilter layer therein.

Forming the plurality of trenches may comprise forming a photoresistpattern on the surface of the transparent substrate, etching thetransparent substrate using the photoresist pattern as a mask, andremoving the photoresist pattern from the transparent substrate.

The color filter layer may have a substantially identical thickness tothe predetermined depth of the plurality of trenches.

The predetermined depth can be about 0.5 μm to about 5 μm when measuredfrom the surface of the transparent substrate.

Etching the transparent substrate can be performed by using an etchingsolution including HF or an HF mixture.

Disposing the color filter material can be performed by repeating a dropprocess and a bake process with respect to a predetermined area to formthe color filter layer in the predetermined area.

The bake process can be performed using a thermal jetting.

Forming the plurality of trenches in the transparent substrate maycomprise forming a black matrix pattern including an organic material ina predetermined area of the surface of the transparent substrate, andetching the transparent substrate using the organic black matrix patternas a mask.

The transparent electrode can be formed on the color filter layer andthe organic black matrix pattern.

The organic black matrix can have a thickness of about 1 μm or below.

According to an exemplary embodiment of the present invention, a methodof manufacturing a color filter substrate comprises forming aphotoresist pattern on a surface of a transparent substrate, forming aplurality of trenches having a predetermined depth by etching thesurface of the transparent substrate using the photoresist pattern as amask, partially removing the photoresist pattern such that a contactarea of the photoresist pattern is identical to a contact area of thetransparent substrate, disposing color filter material in each trenchsuch that the color filter material overlaps a lower end of thephotoresist pattern, removing the photoresist pattern, forming a blackmatrix including an organic material in an area of the transparentsubstrate where the photoresist pattern is removed and forming atransparent electrode on the color filter layer and the organic blackmatrix.

Disposing the color filter material can be performed by repeating a dropprocess and a bake process in a predetermined area to form the colorfilter layer in the predetermined area.

The bake process can be performed using a thermal jetting.

The color filter layer can have a thickness greater than a depth of theplurality of trenches.

The color filter layer can have a substantially identical thickness to athickness obtained by adding the predetermined depth of the plurality oftrenches to a thickness of the organic black matrix.

The photoresist pattern can be partially removed through a plasma ashingprocess.

The organic black matrix can be formed through an inkjet printingprocess.

The predetermined depth can be about 0.5 μm to about 5 μm when measuredfrom the surface of the transparent substrate.

Etching the transparent substrate can be performed by using an etchingsolution including HF or an HF mixture.

According to an exemplary embodiment of the present invention, a methodof manufacturing a thin film transistor comprises forming a signal linesection on a base substrate to define a plurality of pixel areas,etching the base substrate using the signal line section as a mask toform a plurality of trenches on the base substrate, the plurality oftrenches corresponding to the pixel areas, respectively, disposing acolor filter material in each trench by using an inkjet printing methodto form a color filter layer, forming an organic layer on the colorfilter layer and the signal line section, forming a thin film transistoron the organic layer, and forming a pixel electrode electricallyconnected to the thin film transistor.

The signal line section may comprise a plurality of data lines extendingin a first direction and a plurality of gate lines extending in a seconddirection substantially perpendicular to the first direction, and eachof the gate lines is divided into a plurality of gate-line pieces eachof which is arranged between two adjacent data lines.

Prior to forming the thin film transistor on the organic layer, mayfurther comprise forming an opening that exposes a gate electrode of thethin film transistor, forming first and second contact holes that exposeboth ends of the gate-line pieces, respectively, and forming a thirdcontact hole that partially exposes the data lines.

Forming the thin film transistor may comprise forming a semiconductorlayer for the thin film transistor corresponding to the opening, andforming a source electrode and a drain electrode spaced apart from thesource electrode on the semiconductor layer.

The source electrode can be connected to a corresponding data linethrough the third contact hole.

Forming the source and drain electrodes may comprise forming a bridgeelectrode electrically connecting two adjacent gate-line pieces to eachother through the first and second contact holes.

Forming the source and drain electrodes may comprise forming a storageelectrode.

Prior to forming the pixel electrode may further comprise forming aprotective layer covering the thin film transistor, and forming a fourthcontact hole through the protective layer to expose the drain electrodeof the thin film transistor.

The pixel electrode can be formed on the protective layer andelectrically connected to the drain electrode of the thin filmtransistor through the fourth contact hole.

The organic layer may comprise a low dielectric material having adielectric constant of about 3.

BRIEF DESCRIPTION OF THE DRAWINGS

Exemplary embodiments of the present disclosure can be understood inmore detail from the following description taken in conjunction with theaccompanying drawings of which:

FIG. 1 is a graph representing an etching depth of a glass according toconcentration of an etching solution and an etching time;

FIGS. 2A to 2E are sectional views representing a method ofmanufacturing a color filter substrate according to an exemplaryembodiment of the present invention;

FIG. 3 shows a method of performing an inkjet printing process byrepeating a drop process and a bake process according to an exemplaryembodiment of the present invention;

FIGS. 4A to 4G are sectional views representing a method ofmanufacturing a color filter substrate according to an exemplaryembodiment of the present invention;

FIGS. 5A to 5D are sectional views representing a method ofmanufacturing a color filter substrate according to an exemplaryembodiment of the present invention;

FIGS. 6A to 6I are plan views representing a method of manufacturing athin film transistor substrate according to an exemplary embodiment ofthe present invention;

FIGS. 7A to 7C are respective sectional views taken along the linesII-II′ of FIGS. 6A to 6C;

FIG. 7D is a sectional view representing a planarization of a basesubstrate shown in FIG. 7C; and

FIGS. 8A to 8F are respective sectional views taken along the linesII-II′ of FIGS. 6D to 6I.

DESCRIPTION OF EXEMPLARY EMBODIMENTS

Exemplary embodiments of the present invention will be described in moredetail with reference to the accompanying drawings. The presentinvention may, however, be embodied in many different forms and shouldnot be construed as limited to the embodiments set forth herein.

FIG. 1 is a graph representing an etching depth of a glass according toa concentration of an etching solution and an etching time. The etchingsolution includes Hydrogen Fluoride (HF), and concentration of the HFrepresents a weight percent of the HF diluted with ultra pure water.

In FIG. 1, a first graph G1 represents an etching depth according to thetime when the HF is diluted at a ratio of 50:1, a second graph G2represents an etching depth according to the time when the HF is dilutedat a ratio of 10:1, and a third graph G3 represents an etching depthaccording to the time when the HF is diluted at a ratio of 5:1.

Referring to FIG. 1, the etching depths of the glass linearly increaseproportionally to the etching time over the entire dilution range. Anexemplary embodiment of the present invention forms the trench in theglass in accordance with the above linear etching characteristics.

FIGS. 2A and 2E are sectional views representing a method ofmanufacturing a color filter substrate according to an exemplaryembodiment of the present invention.

Referring to FIG. 2A, a photoresist pattern 11 is formed on a glasssubstrate 10 such that a surface of the glass substrate 10 is partiallyexposed. The photoresist pattern 11 includes a positive typephotoresist.

Referring to FIG. 2B, the glass substrate 10 is etched using thephotoresist pattern 11 as a mask, thereby forming a plurality oftrenches 10 a having a predetermined depth on the surface of the glasssubstrate 10. In the above etching process, the etching solutionincluding HF or an HF mixture is used. The etching process is performedby, for example, applying ultrasonic waves or bubbles when the glasssubstrate 10 is dipped into the above etching solution.

An etch rate of the glass substrate 10 is adjusted according to theconcentration of the etching solution including HF or the HF mixture andthe etching time. For instance, the concentration of the etchingsolution and the etching time are adjusted such that the trenches 10 aformed in the glass substrate 10 have a depth of about 0.5 μm to about 5μm. In an exemplary embodiment, an organic black matrix (BM) used as abarrier to prevent an overflow phenomenon of ink has a height of about 3μm. Accordingly, if the trenches 10 a have depths corresponding to theheight of the organic black matrix, the barrier having a heightcorresponding to the organic black matrix may be integrally formed withthe glass substrate 10.

An undercut may occur during the etching process of forming the trenches10 a in the glass substrate 10. The undercut refers to a phenomenon inwhich the glass substrate 10 is excessively etched as compared with alower edge of the photoresist pattern 11.

Referring to FIG. 2C, a color filter layer 20 including a red pixel R, agreen pixel G and a blue pixel B is formed in the trenches 10 a, whichare formed in the glass substrate 10, through an inkjet printing processby using the photoresist pattern 11 as a mask. An area having theundercut is filled with the color pixels through the inkjet printingprocess.

The red, green and blue pixels R, G and B are formed in the trenches 10a with a substantially identical thickness to a depth of the trench 10a, so that the color filter substrate has a flat surface.

Ink dropped in the above inkjet printing process is leveled in a wetstate before a bake process. When the bake process including aconvection oven bake process or a hot-plate process is performed, theink is changed into a dome shape due to difference of a temperature at aperiphery of the barrier. Such a dome shape may degrade the displaycharacteristic. Accordingly, in the inkjet printing process usingdropped ink, a profile of ink may be controlled by adjusting the numberof ink drops and the baking method.

Therefore, as shown in FIG. 3, the inkjet printing process is performedby repeating the drop process and the bake process in a predeterminedarea, thereby flattening the ink. As an example of the presentinvention, the bake process may be performed through a thermal jettingscheme.

Referring to FIG. 3, during the inkjet printing process, the dropprocess and the bake process are repeatedly performed to flatten theink. When the inkjet printing process is performed by installing abaking unit 42 at a rear side of an inkjet unit 41 without usingadditional bake equipment, the process time and the manufacturing costmay be reduced.

Referring to FIG. 2D, the photoresist pattern 11 is removed from thesurface of the glass substrate 10 by using, for example, a lift-offscheme after the inkjet printing process is finished.

Referring to FIG. 2E, a common electrode 50, which forms an electricfield in corporation with a pixel electrode provided on the othersubstrate in opposition to the common electrode 50, is formed on thesurface of the glass substrate 10 and the color filter layer 20. In anexemplary embodiment, the common electrode 50 includes transparentconductive material, such as indium tin oxide (ITO) or indium zinc oxide(IZO). In an exemplary embodiment, the common electrode 50 is patternedto be used in a Patterned Vertical Alignment (PVA) liquid crystaldisplay. In an exemplary embodiment, an overcoat layer may be formed onthe common electrode 50 to protect the common electrode 50.

Since the color filter substrate shown in FIGS. 2A to 2E does not have ablack matrix, the color filter substrate described above is applied to ablack matrix-less (BM-less) structure or a structure in which the blackmatrix is provided in a different substrate.

In an exemplary embodiment, since the color filter substrate has a flatstructure throughout the entire area of the color filter substrate, thedisplay characteristic may be improved and the color filter substratemay have improved constant ratio.

FIGS. 4A to 4G are sectional views representing a method ofmanufacturing a color filter substrate according to an exemplaryembodiment of the present invention.

The processes shown in FIGS. 4A and 4B are identical to those shown inFIGS. 2A and 2B. Through the processes shown in FIGS. 4A and 4B, aplurality of trenches 10 a are formed in the surface of the glasssubstrate 10.

Referring to FIG. 4C, the photoresist pattern 11 is removed using aplasma ashing process from an area having the undercut, which is formedduring a process shown in FIG. 4B. The undercut is generated when theglass substrate 10 is excessively etched as compared with the lower edgeof the photoresist pattern 11. Oxygen (O₂) may be used, for example,exclusively as ashing gas for the plasma ashing process. Alternatively,mixed gas including oxygen serving as main gas and functional additivegas including one selected from Sulfur Hexafluoride (SF₆), Chlorine(CL₂), Argon (Ar), Nitrogen (N₂) and Helium (He) may be used as ashinggas.

Referring to FIG. 4D, the red, green and blue pixels R, G and B areformed through the inkjet printing process to form the color filterlayer 20. The color filter layer 20 formed through the inkjet printingprocess has a substantially identical thickness to a thickness obtainedby adding a thickness of an organic black matrix 60, which is formedlater in FIG. 4F, to a depth of the trench 10 a provided in the glasssubstrate 10. Accordingly, the surface of the color filter layer 20 isdisposed above the surface of the glass substrate 10.

Referring to FIG. 4E, a strip process is performed with respect to thephotoresist pattern 11, so that a space to be filled with the organicblack matrix 60 is provided in the glass substrate 10.

Referring to FIG. 4F, the organic black matrix 60 is formed in the spaceprovided in the glass substrate 10. The organic black matrix 60 may beformed through the inkjet-printing scheme. The organic black matrix 60has a thickness of about 1 μm or below. That is, since a barrier, whichis integrally formed with the glass substrate 10 through the trenches 10a, is provided among the red, green and blue pixels R, G and B, theorganic black matrix 60 has a height lower than that of the conventionalorganic black matrix.

Referring to FIG. 4G, a common electrode 70 is formed on the colorfilter layer 20 and the organic black matrix 60.

In an exemplary embodiment, to form the organic black matrix 60 on theglass substrate 10, the thickness of the color filter layer 20 can beincreased relative to the thickness of the organic black matrix 60, sothat the color filter substrate has a flat structure over the entirearea of the color filter substrate. Accordingly, the display quality maybe improved, the manufacturing cost may be reduced, and themanufacturing process may be simplified.

FIGS. 5A to 5D are sectional views representing a method ofmanufacturing a color filter substrate according to an exemplaryembodiment of the present invention.

Referring to FIG. 5A, an organic black matrix pattern 12 is formed onthe glass substrate 10. The glass substrate 10 is etched by using theorganic black matrix pattern 12 as a mask. Referring to FIG. 5B, aplurality of trenches 10 a having a predetermined depth are formed inthe glass substrate 10. The processes of etching the glass substrate 10are substantially identical to those shown in, for example, FIGS. 2A and2B.

Referring to FIG. 5C, the red, green and blue pixels R, G and B areformed in the trenches 10 a through the inkjet printing processsimilarly to the process shown in FIG. 2C. Accordingly, the color filterlayer 20 is formed in the glass substrate 10. Referring to FIG. 5D, thecommon electrode 50 is formed on the color filter layer 20 and theorganic black matrix pattern 12.

The organic black matrix pattern 12 has a thickness of about 1 μm orbelow. That is, a barrier is provided among the red, green and bluepixels R, G and B such that the barrier is integrally formed with theglass substrate 10 through the trenches 10 a. In an exemplaryembodiment, the organic black matrix pattern 12 has a height lower thanthat of the conventional black matrix pattern.

FIGS. 6A to 6I are plan views representing a method of manufacturing athin film transistor substrate according to an exemplary embodiment ofthe present invention. FIGS. 7A to 7C are sectional views taken alongthe lines I-I′ of FIGS. 6A to 6C, respectively. FIG. 7D is a sectionalview representing a planarization of a base substrate shown in FIG. 7C.

Referring to FIGS. 6A and 7A, a plurality of data lines DL and aplurality of gate lines are formed on a base substrate 110 of glass.Each of the gate lines is divided into a plurality of gate-line piecesGLP. Each of the gate-line pieces GLP is arranged between two adjacentdata lines of the data lines DL.

The data lines DL are extended in a first direction D1 and arrangedalong a second direction D2 substantially perpendicular to the firstdirection D1 such that the data lines DL are parallel to each other. Thegate-line pieces GLP are extended in the second direction D2. Thegate-line pieces GLP are formed by cutting the gate lines extending inthe second direction D2 at a crossing area between the data lined DL andthe gate lines.

As an example of the present invention, the data lines DL and thegate-line pieces GLP may be formed by patterning a first metal layerformed on the base substrate 110. Thus, the data lines DL and thegate-line pieces GLP may have the same material.

The base substrate 110 includes a plurality of pixel areas PA defined bythe data lines DL and the gate-line pieces GLP. Each of the gate-linepieces GLP is provided with a gate electrode GE branching from thegate-line pieces GLP.

Referring to FIGS. 6B and 7B, the base substrate 10 is etched by usingthe data lined DL and the gate-line pieces GLP as a mask. As a result, aplurality of trenches 111 are formed on the base substrate 110corresponding to the pixel areas PA, respectively.

In the etching process of the base substrate 110, HF or an HF mixture isused as an etching solution. The etching process is performed byapplying ultrasonic waves or bubbles when the base substrate 110 isdipped into the above etching solution. An etch rate of the basesubstrate 110 is adjusted according to the concentration of the etchingsolution including HF or the HF mixture and the etching time. That is,the depth of the trenches 111 may be adjusted by adjusting theconcentration of the etching solution and the etching time.

Referring to FIGS. 6C and 7C, a red pixel R, a green pixel C and a bluepixel B are formed in the trenches 111 through an inkjet printingprocess. The red, green and blue pixels R, G and B are formed in thetrenches 111 with a substantially identical thickness to a depth of thetrenches 111, so that the base substrate 110 may have a fiat surface.

Referring to FIG. 7D, an organic layer 120 is formed over the basesubstrate 110 where the red, green and blue pixels R, C and B are formedin the trenches 111. The organic layer 120 may planarize a stepdifference between the red, green and blue pixels R, G and B and thedata lines DL.

FIGS. 8A to 8F are sectional views taken along the lines II-II′ of FIGS.6D to 6I, respectively.

Referring to FIGS. 6D and 8A, the organic layer 120 is patterned to forman opening 123, a first contact hole 121, a second contact hole 122 anda third contact hole 124 through the organic layer 120.

The opening 123 is formed corresponding to the gate electrode GE toexpose the gate electrode GE. The first and second contact holes 121 and122 are formed corresponding to both ends of the gate-line pieces GLP,respectively, to partially expose the both ends of the gate-line piecesGLP. The third contact hole 124 is positioned at a position adjacent tothe gate electrode GE and corresponding to the data lines DL. Thus, thedata lines DL are partially exposed through the third contact hole 124.

Referring to FIGS. 6E and 8B, a semiconductor layer 130 is formed on thegate electrode GE exposed through the opening 123. The semiconductorlayer 130 may include amorphous silicon layer and an ohmic contactlayer.

Referring to FIGS. 6F and 8C, a second metal layer is formed on theorganic layer 120. The second metal layer is patterned to form a bridgeelectrode BE, a source electrode SE and a drain electrode DE. The bridgeelectrode BE is provided to electrically connect two adjacent gate-linepieces GLP to each other.

For example, the bridge electrode BE is connected to an end of a rightgate-line pieces GLP exposed through the first contact hole 121 and anend of a left gate-line pieces GLP exposed through the second contacthole 122, thereby electrically connecting two adjacent gate-line piecesGLP to each other.

The source electrode SE is electrically connected to a correspondingdata line of the data lines DL through the third contact hole 124, andthe source electrode SE extends above the gate electrode GE. The drainelectrode DE is positioned above the gate electrode GE and spaced apartfrom the source electrode SE. Accordingly, the thin film transistor TFTis formed on the base substrate 110.

When the second metal layer is patterned, a storage electrode STE may beformed in each pixel area PA. The storage electrode STE is located at acenter portion in each pixel area PA and extended in a directionsubstantially parallel to the gate-line pieces GLP.

Referring to FIGS. 6G and 8D, a protective layer 140 is formed on thebase substrate 110 to cover the thin film transistor TFT and the storageelectrode STE.

Referring to FIGS. 6H and 8E, the protective layer 140 is partiallypatterned to form a fourth contact hole 141 that exposes the drainelectrode DE of the thin film transistor TFT.

Referring to FIGS. 6I and 8F, a pixel electrode PE including atransparent conductive material is formed on the protective layer 140.The pixel electrode PE is electrically connected to the drain electrodeDE through the fourth contact hole 141, thereby manufacturing the thinfilm transistor substrate 100.

In an exemplary embodiment, the organic layer 120 of the thin filmtransistor substrate 100 includes a low dielectric material having adielectric constant of about 3. Thus, a parasitic capacitance betweenthe data lines DL and the pixel electrode PE, which is proportion to thedielectric constant of the organic layer 120, may be reduced. In anexemplary embodiment, since the parasitic capacitance is reduced, acoupling phenomenon between the data lines DL and the pixel electrode PEmay be prevented and a distance between the data lines DL and the pixelelectrode PE may be reduced, so that an aperture ratio of the thin filmtransistor substrate 100 may be enhanced.

When the red, green and blue pixels R, G and B are formed in thetrenches 111 of the thin film transistor substrate 100, the trenches 111are formed by using the data lines DL and the gate-line pieces GLPapplied to the thin film transistor substrate 100. Accordingly, abarrier wall used to print the red, green and blue pixels R, G and B maybe formed without an additional process, so that the manufacturingprocess of the thin film transistor substrate 100 having acolor-filter-on-array (COA) structure may be simplified.

In an exemplary embodiment, the trenches are formed in the glasssubstrate and the red, green and blue pixels are formed in the trenchesthrough the inkjet printing process, so that the thickness of theorganic black matrix is decreased and the color filter substrate has theflat surface. Accordingly, the display quality such as the contrastratio of the display apparatus may be enhanced by employing the colorfilter substrate.

In an exemplary embodiment, since the organic black matrix may be formedthrough the inkjet printing process, the manufacturing cost for thecolor filter substrate may be reduced and the manufacturing processthereof may be simplified.

Although exemplary embodiments have been described with reference to theaccompanying drawings, it is to be understood that the present inventionis not limited to these precise embodiments but various changes andmodifications can be made by one skilled in the art without departingfrom the spirit and scope of the present invention. All such changes andmodifications are intended to be included within the scope of theinvention as defined by the appended claims.

What is claimed is:
 1. A method of manufacturing a color filtersubstrate, the method comprising: forming a photoresist pattern on asurface of a transparent substrate; forming a plurality of trencheshaving a predetermined depth by etching the surface of the transparentsubstrate using the photoresist pattern as a mask, wherein a portion ofthe transparent substrate under the photoresist pattern is etched toform an undercut; partially removing the photoresist pattern such that acontact area of the photoresist pattern is identical to a contact areaof the transparent substrate; disposing color filter material in eachtrench such that the color filter material overlaps a lower end of thephotoresist pattern, wherein disposing the color filter materialincludes performing both a drop process and a bake process more thanonce in each trench to form a color filter layer; removing thephotoresist pattern to thereby expose a side surface of the color filterlayer and an upper surface of the transparent substrate; forming a blackmatrix including an organic material on the exposed side surface of thecolor filter layer and on the exposed upper surface of the transparentsubstrate where the photoresist pattern was is removed; and forming atransparent electrode on the color filter layer and the organic blackmatrix.
 2. The method of claim 1, wherein the bake process is performedusing a thermal jetting.
 3. The method of claim 1, wherein the colorfilter layer has a thickness greater than a depth of the plurality oftrenches.
 4. The method of claim 3, wherein the color filter layer has asubstantially identical thickness to a thickness obtained by adding thepredetermined depth of the plurality of trenches to a thickness of theorganic black matrix.
 5. The method of claim 1, wherein the photoresistpattern is partially removed through a plasma ashing process.
 6. Themethod of claim 1, wherein the organic black matrix is formed through aninkjet printing process.
 7. The method of claim 1, wherein thepredetermined depth is about 0.5 μm to about 5 μm when measured from thesurface of the transparent substrate.
 8. The method of claim 1, whereinetching the transparent substrate is performed by using an etchingsolution including HF or an HF mixture.
 9. The method of claim 1,wherein the drop and bake processes are performed by an inkjet unit anda baking unit installed at a rear side of the inkjet unit without usingadditional bake equipment.